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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Name: Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Uploaded: 2026-10-23
Duration: 14 min 16 s
Description: Learn to fabricate Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures using plasma-assisted molecular beam epitaxy. This method enables efficient gate modulation for high-frequency, high-power field effect transistors.

DOI: 10.3791/58113-v

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